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  r09ds0021ej0300 rev.3.00 page 1 of 7 jun 28, 2011 the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. preliminary data sheet 2SC3356 npn silicon rf transistor npn epitaxial silicon rf transi stor for microwave low-noise amplification 3-pin minimold features ? low noise and high gain : nf = 1.1 db typ., g a = 11 db typ. @ v ce = 10 v, i c = 7 ma, f = 1 ghz ? high power gain : mag = 13 db typ. @ v ce = 10 v, i c = 20 ma, f = 1 ghz ordering information part number order number package quantity supplying form 2SC3356 2SC3356-a 50 pcs (non reel) ? 8 mm wide embossed taping 2SC3356-t1b 2SC3356-t1b-a 3-pin minimold (pb-free) 3 kpcs/reel ? pin 3 (collector) face the perforation side of the tape remark to order evaluation samples, please contact your nearby sales office. the unit sample quantity is 50 pcs. absolute maximum ratings (t a = +25 c) parameter symbol ratings unit collector to base voltage v cbo 20 v collector to emitter voltage v ceo 12 v emitter to base voltage v ebo 3.0 v collector current i c 100 ma total power dissipation p tot note 200 mw junction temperature t j 150 c storage temperature t stg ? 65 to +150 c note free air caution observe precautions when handling because these devi ces are sensitive to electrostatic discharge. r09ds0021ej0300 rev.3.00 jun 28, 2011
2SC3356 r09ds0021ej0300 rev.3.00 page 2 of 7 jun 28, 2011 electrical characteristics (t a = +25 c) parameter symbol test conditions min. typ. max. unit dc characteristics collector cut-off current i cbo v cb = 10 v, i e = 0 ? ? 1.0 a emitter cut-off current i ebo v eb = 1.0 v, i c = 0 ? ? 1.0 a dc current gain h fe note 1 v ce = 10 v, i c = 20 ma 50 120 250 ? rf characteristics gain bandwidth product f t v ce = 10 v, i c = 20 ma ? 7 ? ghz insertion power gain ? s 21e ? 2 v ce = 10 v, i c = 20 ma, f = 1 ghz ? 11.5 ? db noise figure nf v ce = 10 v, i c = 7 ma, f = 1 ghz ? 1.1 2.0 db reverse transfer capacitance c re note 2 v cb = 10 v, i e = 0, f = 1 mhz ? 0.55 1.0 pf notes 1. pulse measurement: pw 350 s, duty cycle 2% 2. collector to base capacitance when the emitter grounded h fe classification rank q/yq r/yr s/ys marking r23 r24 r25 h fe value 50 to 100 80 to 160 125 to 250
2SC3356 r09ds0021ej0300 rev.3.00 page 3 of 7 jun 28, 2011 typical characteristics (t a = +25 c, unless otherwise specified) dc current gain h fe collector current i c (ma) dc current gain vs. collector current 200 50 100 10 20 1510 0.5 50 v ce = 10 v 250 200 150 100 50 0 25 50 75 100 125 150 total power dissipation p tot (mw) ambient temperature t a (?c) total power dissipation vs. ambient temperature free air reverse transfer capacitance c re (pf) collector to base voltage v cb (v) reverse transfer capacitance vs. collector to base voltage 2 1 0.5 0.3 0.5 0.2 1 2 5 10 30 20 f = 1 mhz v ce = 10 v gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current 10 2 5 0.2 0.5 1 0.1 1 5 10 50 0.1 0.5 100 v ce = 10 v f = 1 ghz collector current i c (ma) insertion power gain vs. collector current insertion power gain |s 21e | 2 (db) 15 10 0 5 0.5 1 10 50 570 v ce = 10 v i c = 20 ma frequency f (ghz) insertion power gain, mag vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) 25 15 20 5 10 0 0.05 0.1 0.5 1 0.2 2 mag |s 21e | 2 remark the graphs indicate nominal characteristics.
2SC3356 r09ds0021ej0300 rev.3.00 page 4 of 7 jun 28, 2011 7 0 1 2 3 4 5 6 0.5 1 5 10 50 70 collector current i c (ma) noise figure vs. collector current noise figure nf (db) v ce = 10 v f = 1 ghz 5 4 3 2 1 0 15 3 6 9 12 0 246810 collector to emitter voltage v ce (v) noise figure, insertion power gain vs. collector to emitter voltage noise figure nf (db) insertion power gain |s 21e | 2 (db) f = 1 ghz i c = 20 ma |s 21e | 2 nf remark the graphs indicate nominal characteristics.
2SC3356 r09ds0021ej0300 rev.3.00 page 5 of 7 jun 28, 2011 smith chart s 21e -frequency condition : v ce = 10 v, i c = 20 ma 90? 0? 30? ?30? 60? ?60? 180? 150? ?150? 120? ?120? ?90? 5 10 15 20 s 21e 0.2 ghz 2.0 ghz s 12e -frequency condition : v ce = 10 v, i c = 20 ma 90? 0? 30? ?30? 60? ?60? 180? 150? ?150? 120? ?120? ?90? 0.05 0.1 0.15 0.2 0.25 s 12e 0.2 ghz 2.0 ghz s 11e , s 22e -frequency condition : v ce = 10 v, 200 mhz step 60 20 30 40 50 70 80 90 100 110 120 130 140 150 ? 160 ? 150 ? 140 ? 130 ? 120 ? 110 ? 100 ? 90 ? 80 ? 70 ? 60 ? 50 ? 40 ? 30 ? 20 ? 10 0 10 0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.21 0.19 0.17 0.15 0.13 0.11 0.09 0.07 0.05 0.03 0.02 0.01 0 0.49 0.48 0.47 0.46 0.45 0.44 0.43 0.42 0.41 0.40 0.39 0.38 0.37 0.36 0.35 0.34 0.33 0.32 0.31 0.30 0.29 0.28 0.27 0.26 0.25 0.24 0.23 0.28 0.30 0.32 0.34 0.36 0.38 0.40 0.42 0.44 0.46 0.29 0.31 0.33 0.35 0.37 0.39 0.41 0.43 0.45 0.47 0.48 0.49 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.20 0.21 0.22 0.23 0.24 0.25 0.26 0.27 w a v e l e n g t h s t o w a r d l o a d a n g l e o f r e f l e c t i o n c o e f f c i e n t i n d e g r e e s w a v e l e n g t h s t o w a r d g e n e r a t o r reactance co mponent ( r ???? z o ) ( +jx ???? z o ) p o s i t i v e r e a c t a n c e c o m p o n e n t ne g a t i v e r e a c t a n c e c o m p o n e n t ( ? jx ???? z o ) 0.8 0.7 0.6 0.3 0.2 0.1 0.4 0.5 5.0 10 50 3.0 4 .0 1.8 2.0 1.2 1.0 0.9 1.4 1.6 20 2.0 50 10 6.0 4.0 3.0 1.8 1.6 1.4 1.2 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1.0 20 0.2 ghz 2.0 ghz 2.0 ghz 0.2 ghz i c = 20 ma s 22e s 11e i c = 20 ma i c = 5 ma i c = 5 ma 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 1.0 0.8 0.6 0.4 1.0 0.8 0.6 0.2 0.4 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 0 1.2
2SC3356 r09ds0021ej0300 rev.3.00 page 6 of 7 jun 28, 2011 s-parameters s-parameters and noise parameters are prov ided on our web site in a format (s2p ) that enables the direct import of the parameters to microwave circuit simula tors without the need for keyboard inputs. click here to download s-parameters. [rf and microwave] [device parameters] url http://www2.renesas.com/microwave/en/download.html
2SC3356 r09ds0021ej0300 rev.3.00 page 7 of 7 jun 28, 2011 package dimensions 3-pin minimold (unit: mm) 2.80.2 1.5 2 1 3 2.90.2 0.95 0.95 0.4 +0.1 ?0.05 0.4 +0.1 ?0.05 0.65 +0.1 ?0.15 0.16 +0.1 ?0.05 0.3 0 to 0.1 1.1 to 1.4 marking 1. emitter 2. base 3. collector pin connections
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history 2SC3356 data sheet description rev. date page summary ? jun 2004 ? previous no. :pu10209ej02v0ds 3.00 jun 28, 2011 p.1 modification of ordering information p.2 modification of h fe classification
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